Extending the Absorption Limit of BiVO <sub>4</sub> Photoanodes with Hydrogen Sulfide Treatment

نویسندگان

چکیده

Bismuth vanadate is a promising photoanode material for photoelectrochemical water splitting due to its relative stability, low cost, and nontoxic properties. However, performance limited by the large bandgap (Eg) of 2.4 eV, record photocurrent already within 90% theoretical limit. Further enhancement could only be obtained increasing optical absorption, example, reducing Eg. Herein, sulfur-incorporated bismuth (S-BiVO4) thin films are synthesized via spray pyrolysis combined with post-treatment in hydrogen sulfide environment. Under optimal H2S treatment conditions, sulfur can incorporated successfully into BiVO4 lattice, without formation any secondary phases. The use reactive H2S, instead solid powders, allows us decrease required annealing temperature increase kinetics incorporation BiVO4. Eg resulting S-BiVO4 decreased >200 meV (vs. pristine BiVO4), which theoretically corresponds 20% Finally, stability limitation overcome introducing pulsed-laser-deposited NiOx protection layers. modified S-BiVO4/ film exhibits higher density no reduction during 9 h test AM1.5 illumination.

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ژورنال

عنوان ژورنال: Solar RRL

سال: 2022

ISSN: ['2367-198X']

DOI: https://doi.org/10.1002/solr.202200129